Structural and optical properties of Al_xGa_1−xN (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition

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• 作者：Qingjun Xu^a ; ^b ; Bin Liu^a ; ^{bliu@nju.edu.cn} ; Shiying Zhang^a ; ^b ; Tao Tao^a ; Jiangping Dai^a ; Guotang He^a ; Zili Xie^a ; Xiangqian Xiu^a ; Dunjun Chen^a ; Peng Chen^a ; Ping Han^a ; Rong Zhang^a ; ^{rzhang@nju.edu.cn}
• 关键词：AlxGa1&minus ; xN ; High Al content ; High-temperature AlN interlayer ; MOCVD
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：144-151
• 全文大小：1135 K
• 卷排序：101

文摘

AlxGa1−xN (0.33 ≤ x ≤ 0.79) eliplayers have grown on HT-AlN interlayer by MOCVD. The screw TDs density evaluated by TEM agrees with that from W-H plots. HT-AlN interlayer can sufficiently reduce TDs through V trenches in the HT-AlN. The optical properties of AlGaN epilayer were characterized by DUV-TIPL and TRPL.