Bismuth doped Mg₂Si with improved homogeneity: Synthesis, characterization and optimization of thermoelectric properties

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• 作者：P. Nieroda^a ; ^{pnieroda@agh.edu.pl} ; J. Leszczynski^a ; A. Kolezynski^b
• 关键词：Magnesium Silicide ; Thermoelectric Materials ; Full Potential Linearized Augmented Plane ; Wave Method ; DFT calculations ; Electronic Structure
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：103
• 期：Complete
• 页码：147-159
• 全文大小：2551 K
• 卷排序：103

文摘

Samples of Mg2Si1−xBix using SPS technique and annealing process were synthesised. The electronic structure calculations for Bi doped Mg2Si were carried out. Comprehensive study of structural and microstructural properties were examined. Comprehensive examination of thermoelectric transport properties were studied. All doped samples have higher value of ZT parameter in relation to the undoped Mg2Si.