Doping dependence of the G-band Raman spectra of an individual multiwall carbon nanotube

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• 作者：Sebastien Nanot ; Marius Millot ; Bertr ; Raquet ; Jean-Marc Broto ; Arnaud Magrez ; Jesus Gonzalez
• 关键词：Carbon nanotubes ; Electron-phonon interaction
• 刊名：Physica E
• 出版年：2010
• 出版时间：July 2010
• 年：2010
• 卷：42
• 期：9
• 页码：2466-2470
• 全文大小：460 K

文摘

We present a gate-dependent Raman spectroscopy and electric transport measurements of an individually connected multiwall carbon nanotube in the field-effect transistor configuration at room temperature. We discuss the origin of the four distinct sharp modes in the G-band feature. The overall G-band is blueshifted by tuning the Fermi level under a back-gate voltage. Each mode experiences different energy shifts symmetrical for n and p doping. Assuming that the four peaks can be tentatively assigned to four different shells of the multiwall carbon nanotube, we propose a simple quantitative analysis which unravels intershell charge transfer within the nanotube.