Substrate preheating and structural properties of power plasma sprayed hydroxyapatite coatings

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• 作者：Bojan R. Gligorijević^a ; ^{bgligorijevic@tmf.bg.ac.rs" class="auth_mail" title="E-mail the corresponding author} ; ^{bojan.gligorijevic@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Miroljub Vilotijević^b ; ^c ; Maja &Scaron ; ćepanović^d ; Nikola S. Vuković^e ; Nenad A. Radović^f
• 关键词：Hydroxyapatite coatings ; Plasma spraying ; Substrate preheating ; Structural properties ; Micro-Raman spectroscopy
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：42
• 期：1
• 页码：411-420
• 全文大小：2090 K

文摘

The aim of the present study was to investigate the influence of substrate preheating on the structural properties of hydroxyapatite coatings (HACs) deposited by using the high power (52 kW) laminar plasma jet. The deposition experiments were performed within the 20–200 °C temperature range at different stand-off distances. The structural properties in the thickness direction and at the surface of the HACs were investigated by using the micro-Raman spectroscopy, scanning electron microscopy coupled with energy dispersive spectrometry, and X-ray powder diffractometry. The deposition without the preheating of the substrate produced HACs with crystallinity gradient in the thickness direction. At the stand-off distance of 80 mm, the preheating of the substrate at 200 °C practically eliminated the crystallinity gradient. At distances from the coating/substrate interface shorter than ~100 µm, the increase of crystallinity with the preheating of the substrate was dominantly attributed to the recrystallization of hydroxyl-rich ACP into HA. At longer distances and higher initial substrate temperatures (>100 °C), the crystallinity changes were negligible, whereas the recrystallization of hydroxyl-deficient ACP into oxyapatite (OA) was also possible. The X-ray diffractometry indicated the deposition conditions under which a minimum residual stress was achieved. The results of the present study strongly suggested the relation between the ACP→HA recrystallization process and the bonding strength of the HACs.