Direct MOVPE growth of semipolar AlxGa1−pan style='font-style: italic'>x N across the alloy composition range
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- 作者：Nirupam Hatui
- 关键词：A1. High resolution X-ray diffraction ; A3. Low pressure metalorganic vapor phase epitaxy ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 March 2016
- 年：2016
- 卷：437
- 期：Complete
- 页码：1-5
- 全文大小：1339 K
文摘
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- <p id="p0005">(11–22) oriented semipolar AlGaN nitride layers grown across the composition range directly on m-sapphire substrates.p>
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- <p id="p0010">Comprehensive structural characterization including discussion of phase-purity, surface morphology and epilayer tilt.p>
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- <p id="p0015">Polarization-resolved optical transmission measurements show interesting valence band ordering properties.p>