Growth mechanism of Pt modified TiO₂ thick film

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• 作者：Maolin Zhang^a ; ^{mlzhang@xidian.edu.cn}Author Vitae ; Zhanheng Yuan^bAuthor Vitae ; Tao Ning^cAuthor Vitae ; Jianping Song^bAuthor Vitae ; Cheng Zheng^bAuthor Vitae
• 关键词：Pt/TiO2 ; Surface state ; Defect ; Growth mechanism
• 刊名：Sensors and Actuators B: Chemical
• 出版年：2013
• 出版时间：January, 2013
• 年：2013
• 卷：176
• 期：Complete
• 页码：723-728
• 全文大小：962 K

文摘

Platinum is widely used to modify TiO₂ based gas sensing materials, and the promotion mechanism accompanied by praiseworthy results are discussed deeply. In this work, the growth mechanism of Pt dispersed on TiO₂ thick film surface is discussed. The surface state of Pt is studied by XRD, XPS, SEM and Kr?ger-Vink defect theory in depth. Results indicate that Pt is not only dispersed on TiO₂ thick film surface in metallic state but also occupy the lattice of Ti vacancy and form the oxidation state Ti_1?xPt_xO₂. A simple model is proposed to explain the growth process of Pt and Ti_1?xPt_xO₂.