Atomic layer deposition of ferromagnetic cobalt doped titanium oxide thin films

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• 作者：Viljami Pore^a ; ¹ ; Mukesh Dimri^b ; Himani Khanduri^b ; ^c ; Raivo Stern^b ; Jun Lu^d ; Lars Hultman^d ; Kaupo Kukli^a ; ^e ; ^{kaupo.kukli@ut.ee} ; ^{kaupo.kukli@helsinki.fi} ; Mikko Ritala^a ; Markku Leskel&#xe4 ; ^a
• 关键词：Atomic layer deposition ; Magnetization moments and magnetic susceptibilities ; Magnetic properties of monolayers and thin films
• 刊名：Thin Solid Films
• 出版年：2011
• 出版时间：1 March 2011
• 年：2011
• 卷：519
• 期：10
• 页码：3318-3324
• 全文大小：1598 K

文摘

TiO₂ thin films doped or mixed with cobalt oxide were grown by atomic layer deposition using titanium tetramethoxide and cobalt(III)acetylacetonate as metal precursors. The films could be deposited using both O₃ and H₂O as oxygen precursors. The films grown using water exhibited considerably smoother surface than those grown with ozone. The TiO₂:Co films with Co/(Co + Ti) cation ratio ranging from 0.01 to 0.30 were crystallized by annealing at 650 °C, possessing mixed phase composition comprising rutile and anatase and, additionally, CoTiO₃ or CoTi₂O₅. The annealed films demonstrated magnetic response expressed by magnetization curves with certain hysteresis and coercive fields.