Choosing the Best Silicon Material Parameters for Different Solar Cell Architectures

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• 作者：Heiko Steinkemper ; ^{heiko.steinkemper@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author} ; Bernhard Michl ; Martin Hermle ; Stefan W. Glunz
• 关键词：Silicon solar cells ; numerical modeling ; device simulation
• 刊名：Energy Procedia
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：92
• 期：Complete
• 页码：225-231
• 全文大小：578 K

文摘

In a recent publication, we presented a comprehensive simulation study of industrially relevant solar cell architectures for an optimal material parameter choice, where the Shockley-Read-Hall lifetime was varied in the range of several microseconds to milliseconds with the assumption τ_n0 = τ_p0. In the here presented investigation we focus on the influence of different impurities on the optimal doping concentration, taking into account more realistic (symmetric or asymmetric) behaviors of the lifetimes τ_n0 and τ_p0. Therefore, we present an application example of our recently published simulation study, where two different iron defects (iron boron pairs and interstitial iron) are implemented in different p-type silicon solar cells (Al-BSF, AlB-BSF and PERT). It is shown that the optimal doping concentration not only depends on the cell architecture, but that the device limiting impurity also plays an essential role.