Investigations of hydrogen sensors made of porous silicon
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- 作者：V.E. Galstyan ; Kh.S. Martirosyan ; V.M. Aroutiounian ; V.M. Arakelyan ; A.H. Arakelyan ; P.G. Soukiassian
- 关键词：Porous silicon ; Hydrogen sensor
- 刊名：Thin Solid Films
- 出版年：2008
- 出版时间：3 November 2008
- 年：2008
- 卷：517
- 期：1
- 页码：239-241
- 全文大小：245 K
文摘
Porous silicon layer was formed by electrochemical anodization on n- and p-type silicon surface. Thereafter n-type TiO1.98 and ZnOAl thin films were deposited onto porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. A Pt catalytic layer and Au electrical contacts for further electrical measurements were deposited by ion-beam sputtering. Changes in sensitivity versus time of obtained structures were examined for different concentrations of hydrogen gas and propane–butane mixture. High sensitivity and selectivity to hydrogen gas was detected. All measurements were carried out at 40 °C.