Defect-induced Raman spectroscopy in single-layer graphene with boron and nitrogen substitutional defects by theoretical investigation
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- 作者：Jie Jiang ; Ruth Pachter ; ruth.pachter@us.af.mil" class="auth_mail" title="E-mail the corresponding author ; Ahmad E. Islam ; Benji Maruyama ; John J. Boeckl
- 刊名：Chemical Physics Letters
- 出版年：2016
- 出版时间：16 October 2016
- 年：2016
- 卷：663
- 期：Complete
- 页码：79-83
- 全文大小：745 K
文摘
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Method to predict graphene Raman intensities induced by substitutional defects.
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Analytical analysis provided insight into electron-defect scattering cross-sections.
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Fermi level shifts upon doping showed results comparable to electrolyte gating.