Thermal decomposition of tetrabromosilane and deposition of crystalline silicon

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• 作者：Masaharu Nakayama ; ^{nkymm@yamaguchi-u.ac.jp" class="auth_mail} ; Seiji Miyamoto ; Takuro Ogawa ; Shogo Osae ; Kazuaki Tomono ; Michinori Sumimoto ; Yoshihisa Sakata ; Ryuichi Komatsu
• 关键词：SiBr4 ; Thermochemical decomposition ; Si deposition ; Flow reactor
• 刊名：Materials Science in Semiconductor Processing
• 出版年：July, 2014
• 年：2014
• 卷：23
• 期：Complete
• 页码：93-97
• 全文大小：1066 K

文摘

Pyrolysis of tetrabromosilane (SiBr₄) was carried out by passing vaporized SiBr₄ with hydrogen over a substrate heated to less than 1000 掳C. The substrate was then placed in a reaction furnace equipped with a flow system and the exhaust gas containing the reactants and products was analyzed versus temperature. SiBr₄ began to decompose at 800 掳C simultaneously with the evolution of tribromosilane (SiHBr₃), which was followed by the deposition of silicon in a crystalline form. The conversion of SiBr₄ increased with increasing reaction temperature. No reaction occurred in the absence of H₂. An experiment with tetrachlorosilane (SiCl₄) under the similar conditions led to a decrease in SiCl₄ concentration at temperatures greater than 900 掳C. This demonstrates that decomposition of SiBr₄ is energetically favorable compared to that of SiCl₄, as predicted from the Ellingham diagrams for the reactions of Br- and Cl-containing species. Thus, Si production from bromosilanes is an alternative to the process using SiHCl₃, the so-called Siemens method, which is the main technology for Si production currently.