High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems
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- 作者：Yamada ; Syoji ; Ohnishi ; Takashi ; Kakegawa ; Tomoyasu ; Akabori ; Masashi ; Suzuki ; Toshi-kazu ; et. al.
- 关键词：73.43.Qt ; A. GaN/AlGaN ; D. Magnetoresistance ; D. Two-dimensional electron gas ; E. Hall measurements ; E. MOCVD
- 刊名：Solid State Communications
- 出版年：2005
- 出版时间：March, 2005
- 年：2005
- 卷：133
- 期：10
- 页码：647-649
- 全文大小：196 K
文摘
Basic electronic properties of two-dimensional electron gas (2DEG) formed at GaN/AlGaN hetero-interface in large-scale (100mm) wafer made by metal organic chemical vapour deposition (MOCVD) have been reported and discussed. From conventional Hall measurements, highest electron mobility was found to be μe
1680 and 9000cm2/Vs at room temperature and at 5K, respectively, for sheet electron density of ns8×1012cm−2. In magneto-resistance (MR) measurements carried out at 1.5K in Hall bar sample defined by photolithography and ion implantation, very clear Schubnikov de-Haas oscillations and integer quantum Hall effect were observed in diagonal (Rxx) and off-diagonal (Rxy) resistances, respectively. In addition, a good insulating nature of GaN layer is confirmed by capacitance–voltage (C–V) measurement. These results suggest the high-qualitiness of our 100mm GaN/AlGaN high electron mobility transistor (HEMT) wafers comparable to those so far reported.
1680 and 9000cm2/Vs at room temperature and at 5K, respectively, for sheet electron density of ns8×1012cm−2. In magneto-resistance (MR) measurements carried out at 1.5K in Hall bar sample defined by photolithography and ion implantation, very clear Schubnikov de-Haas oscillations and integer quantum Hall effect were observed in diagonal (Rxx) and off-diagonal (Rxy) resistances, respectively. In addition, a good insulating nature of GaN layer is confirmed by capacitance–voltage (C–V) measurement. These results suggest the high-qualitiness of our 100mm GaN/AlGaN high electron mobility transistor (HEMT) wafers comparable to those so far reported.