Formation of Al_xGa_1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

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• 作者：Takeda ; Junichiro ; Akabori ; Masashi ; Motohisa ; Junichi ; Fukui ; Takashi
• 关键词：Selective area MOVPE ; Pillar array ; Air-hole array
• 刊名：Applied Surface Science
• 出版年：2002
• 出版时间：May 8, 2002
• 年：2002
• 卷：190
• 期：1-4
• 页码：236-241
• 全文大小：341 K

文摘

A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a Al_xGa_1−xAs 2D periodic array on a GaAs (111)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. Al_xGa_1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiN_x masks. A uniform Al_0.50Ga_0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages.