Highly oriented crystal growth of nanocrystalline bismuth telluride thin films with anisotropic thermoelectric properties using two-step treatment

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• 作者：Kazuki Yamauchi ; Masayuki Takashiri ; ^{takashiri@tokai-u.jp}
• 关键词：Two-step treatment ; Homogeneous electron beam irradiation ; Thermal annealing ; Crystal orientation ; Bismuth telluride
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 March 2017
• 年：2017
• 卷：698
• 期：Complete
• 页码：977-983
• 全文大小：1598 K
• 卷排序：698

文摘

Bi2Te3 thin films were deposited by radiofrequency magnetron sputtering. Deposited Bi2Te3 thin films were treated with two-step method. Resulting Bi2Te3 thin films obtained high crystallinity and crystal orientation. In-plane and cross-plane thermoelectric properties were estimated at RT. In-plane power factor exhibited 4 times higher than that of cross-plane.