Spin engineering of carrier-induced magnetic ordering in (Cd,Mn)Te quantum wells
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- 作者：Kossacki ; P. ; Pacuski ; W. ; Maslana ; W. ; Gaj ; J.A. ; Bertolini ; M. ; Ferrand ; D. ; Tatarenko ; S. ; Cibert ; J.
- 关键词：75.50.Rr ; 75.30.Hx ; 75.50.Dd ; 78.55.Et ; Diluted magnetic semiconductors ; Ferromagnetic semiconductors ; Heterostructures
- 刊名：Physica E
- 出版年：2004
- 出版时间：March, 2004
- 年：2004
- 卷：21
- 期：2-4
- 页码：943-946
- 全文大小：199 K
文摘
Properties of carrier-induced ferromagnetism in modulation-doped quantum wells of p-type (Cd,Mn)Te are studied by photoluminescence and reflectivity in magnetic field. Valence-band engineering can strongly modify the magnetic properties of a system of localized spins interacting via a 2D hole gas. This is obtained through a strain control of the light-hole (lh)/ heavy-hole (hh) splitting. The axis of easy magnetization can be turned from the growth direction (with a hh gas) to be in-plane (lh gas). It is also found that the strong alloy fluctuations in (Cd,Mn)Te quantum wells containing about 10 % of Mn ions are strong enough to significantly modify the magnetic state of the coupled ion-carrier system. A similar effect is observed at moderate Mn content, by restoring the lh/hh degeneracy.