Nucleation and coalescence behavior for epitaxial ZnO layers on ZnO/sapphire templates grown by halide vapor phase epitaxy
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- 作者：Tetsuo Fujii ; Naoki Yoshii ; Rui Masuda ; Tetsuhiro Tanabe ; Akira Kamisawa ; Shigetoshi Hosaka ; Yoshinao Kumagai ; Akinori Koukitu
- 关键词：A1. Crystal structure ; A1. Nucleation ; A3. Vapor phase epitaxy ; B1. Oxide ; B1. Zinc compounds
- 刊名：Journal of Crystal Growth
- 出版年：2009
- 出版时间：1 February 2009
- 年：2009
- 卷：311
- 期：4
- 页码：1056-1059
- 全文大小：1043 K
文摘
The effects of growth conditions for ZnO layers grown by halide vapor phase epitaxy (HVPE) on (0 0 0 1) ZnO/sapphire templates are investigated. Micron-sized pyramidal ZnO islands nucleate on the template at the initial growth stage and each island grows differently with the process conditions. The high temperature of 1000 °C promotes a lateral growth rate and coalescence between the islands. The full-width at half-maximums (FWHMs) of X-ray rocking curves for the (0 0 0 2) and (1 0 1¯ 1) planes from a fully coalesced ZnO layer are quite narrow values below 160 arcsec. Transmission electron microscopy (TEM) reveals that screw character dislocations in the template do not propagate into the HVPE-grown layer.