Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl₂ and H₂O source gases

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• 作者：Rui Masuda ; Tetsuo Fujii ; Naoki Yoshii ; Yoshinao Kumagai ; Akinori Koukitu
• 关键词：A1. Atomic force microscopy ; A3. Vapor phase epitaxy ; B1. Oxides ; B1. Zinc compounds ; B2. Semiconducting II– ; VI materials
• 刊名：Journal of Crystal Growth
• 出版年：2010
• 出版时间：1 August 2010-15 August 2010
• 年：2010
• 卷：312
• 期：16-17
• 页码：2324-2327
• 全文大小：717 K

文摘

The surface morphology of homoepitaxial (0 0 0 1)ZnO thin layers grown by halide vapor phase epitaxy (HVPE) using ZnCl₂ and H₂O source gases was investigated. Atomic force microscopy (AFM) observations showed that high temperature growth at 1000 °C with a low input H₂O/ZnCl₂ (VI/II) partial pressure ratio of 20 strongly promoted step-flow growth. X-ray diffraction (XRD) analyses revealed the crystalline quality of the homoepitaxial ZnO layer grown at 1000 °C with input VI/II ratio of 20 is comparable to that of bulk ZnO substrates. Under a constant input partial pressure of ZnCl₂, the growth rate of ZnO is constant within the temperature range 700–900 °C, and the growth rate decreases above 900 °C due to the shift of thermodynamic equilibrium of the growth reaction.