Analytical model for phonon transport analysis of periodic bulk nanoporous structures
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- 作者：Qing Hao ; qinghao@email.arizona.edu ; Yue Xiao ; Hongbo Zhao
- 关键词：Porous materials ; Phonon transport ; Pore-phonon mean free path
- 刊名：Applied Thermal Engineering
- 出版年：2017
- 出版时间：25 January 2017
- 年：2017
- 卷：111
- 期：Complete
- 页码：1409-1416
- 全文大小：888 K
- 卷排序：111
文摘
Phonon transport analysis in nano- and micro-porous materials is critical to their energy-related applications. Assuming diffusive phonon scattering by pore edges, the lattice thermal conductivity can be predicted by modifying the bulk phonon mean free paths with the characteristic length of the nanoporous structure, i.e., the phonon mean free path (ΛPoreΛPore) for the pore-edge scattering of phonons. In previous studies (Jean et al., 2014), a Monte Carlo (MC) technique have been employed to extract geometry-determined ΛPoreΛPore for nanoporous bulk materials with selected periods and porosities. In other studies (Minnich and Chen, 2007; Machrafi and Lebon, 2015), simple expressions have been proposed to compute ΛPoreΛPore. However, some divergence can often be found between lattice thermal conductivities predicted by phonon MC simulations and by analytical models using ΛPoreΛPore. In this work, the effective ΛPoreΛPore values are extracted by matching the frequency-dependent phonon MC simulations with the analytical model for nanoporous bulk Si. The obtained ΛPoreΛPore values are usually smaller than their analytical expressions. These new values are further confirmed by frequency-dependent phonon MC simulations on nanoporous bulk Ge. By normalizing the volumetric surface area A and ΛPoreΛPore with the period length p, the same curve can be used for bulk materials with aligned cubic or spherical pores up to dimensionless p·A of 1.5. Available experimental data for nanoporous Si materials are further analyzed with new ΛPoreΛPore values. In practice, the proposed model can be employed for the thermal analysis of various nanoporous materials and thus replace the time-consuming phonon MC simulations.