Optical properties of self-assembled InGaN/GaN quantum dots

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• 作者：Taliercio ; T. ; Lefebvre ; P. ; Morel ; A. ; Gallart ; M. ; Allè ; gre ; J. ; Gil ; B. ; Mathieu ; H. ; et. al.
• 刊名：Materials Science and Engineering: B
• 出版年：2001
• 出版时间：May 22, 2001
• 年：2001
• 卷：82
• 期：1-3
• 页码：151-155
• 全文大小：130 K

文摘

Optical spectroscopy under varying temperature is used to investigate samples containing planes of self-assembled Ga_1−xIn_xN quantum dots (0.15<x<0.20), embedded in a GaN matrix. The samples have been grown by molecular beam epitaxy on sapphire substrates and the nano-islands have been obtained by the Stranski-Krastanov growth mode transition. Half-widths at half maximum as small as 0.05 eV are obtained for photoluminescence (PL) lines at T