VOPc based diodes are fabricated at three different deposition rates 0.1, 1 and 5 Å/s. Hole mobility was estimated using SCLC regime in J-V characteristics. The conduction mechanism is space charge limited with exponential trap distribution. The charge carrier mobility measured form J-V characteristics is consistent with the mobilities estimated from Impedance measurements. The frequency dependence of dc and ac conductivity at various temperatures indicate that the dominant mechanism for charge transport is the hopping type.