Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs
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- 作者：Kolsoom Mehrabia ; kolsoom.mehrabi@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Behzad Ebrahimia ; bebrahimi@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Roohollah Yarmanda ; ryarmand@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Ali Afzali-Kushaa ; afzali@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Hamid Mahmoodib ; mahmoodi@sfsu.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：SRAM ; SBD ; NBTI ; PBTI ; RSNM modeling ; FinFET
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：65
- 期：Complete
- 页码：20-26
- 全文大小：1259 K
文摘
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Proposing an accurate model for RSNM of 6T FinFET SRAM considering SBD and BTI
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Presenting the study of BTI and SBD combined effects on RSNM of 6T FinFET SRAM
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The accuracy and speed comparisons of the model to those of Monte Carlo simulation