N2O plasma treatment for minimization of background plating in silicon solar cells with Ni-Cu front side metallization
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- 作者：Mehul C. Ravala ; b ; mehul.c.raval@iitb.ac.in" class="auth_mail" title="E-mail the corresponding author ; Sandeep S. Saseendrana ; c ; Stephan Suckowd ; S. Saravanana ; Chetan S. Solankia ; b ; Anil Kottantharayila ; c
- 关键词：Ni&ndash ; Cu metallization ; Background plating ; Local ideality factor ; N2O plasma treatment
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：144
- 期：Complete
- 页码：671-677
- 全文大小：1640 K
文摘
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Background plating limits FF by creating resistance limited defect recombination.
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N2O plasma pre-treatment improves FF by reducing extent of background plating.
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N2O plasma post-treatment improves FF further by eliminating RLR.
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Performance improvement due to post-treatment is attributed to oxidation of ARC.
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I–V curve fits to a 3-diode model were performed with a modified fitting software.