Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor

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• 作者：Fatih Gul^a ; ^{fatihgul@atauni.edu.tr} ; Hasan Efeoglu^a ; ^b
• 关键词：Memristor ; Zinc oxide ; Bipolar resistive switching ; Schottky emission ; Oxygen vacancies
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：172-179
• 全文大小：1781 K
• 卷排序：101

文摘

A direct-current reactive sputtered Al/ZnO/Al based memristor device has been fabricated. The device shows forming-free, uniform, bipolar resistive switching behavior. The Schottky emission mechanism is dominant in the high electric field region. Conduction mechanism is related to the oxygen vacancies in the ZnO structure.