An improved model for current voltage characteristics of submicron SiC MESFETs

详细信息    查看全文

• 作者：Mohammad Riaz ; Muhammad Mansoor Ahmed ; Usama Munir
• 关键词：Submicron SiC MESFET ; Microwave devices ; High power MESFETs ; Swarm optimization ; Simulation and modeling
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：121
• 期：Complete
• 页码：54-61
• 全文大小：687 K

文摘

This paper presents an improved model to simulate I-V$I-V$ characteristics of submicron SiC MESFETs, designed for microwave power applications. The proposed model adequately addresses a non-ideal Schottky behavior, commonly observed in submicron devices, by adjusting the device biasing through simulation variables. Swarm optimization technique has been applied to investigate gate length (L_g$L_g$) dependent performance of various SiC MESFETs models. It has been found that the proposed model provides an improved accuracy, ranging from 7% to 24%, compared to the best models available in the literature. This enhanced performance is primarily associated with the extra control, provided by the proposed model to simulate the movement of the depletion region in the channel as a function of applied voltages. An attempt has been made to identify the location underneath the Schottky barrier gate, where the depletion region gets its maximum height and thus controls the saturation current of the channel. Physical and electrical parameters of various SiC MESFETs having L_g = 0.4 μm, 0.5 μm, 0.6 μm and 0.7 μm have also been assessed. An accurate assessment of the physical parameters of the device exhibits the validity of the model for submicron SiC MESFETs.