On the design of GaN vertical MESFETs on commercial LED sapphire wafers

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• 作者：Mahmoud R.M. Atalla^a ; ^b ; ^{mra193@psu.edu" class="auth_mail" title="E-mail the corresponding author} ; Asim M. Noor Elahi^a ; ^c ; Chen Mo^a ; Zhenyu Jiang^a ; Jie Liu^a ; S. Ashok^a ; Jian Xu^a ; ^{jianxu@engr.psu.edu" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Vertical MESFETs ; Schottky barrier lowering ; Commercial LED wafers ; Charge transport model ; LT GaN buffer layer
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：126
• 期：Complete
• 页码：23-31
• 全文大小：1989 K

文摘

Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.