Symmetrical SOI MESFET with a dual cavity region (DCR-SOI MESFET) to promote high-voltage and radio-frequency performances
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- 作者：Mohammad K. Anvarifard m.anvarifard@guilan.ac.ir" class="auth_mail" title="E-mail the corresponding author
- 关键词：breakdown voltage ; p-type cavity region ; Potential profile ; SOI-MESFET ; Radio-frequency
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：98
- 期：Complete
- 页码：492-503
- 全文大小：1703 K
文摘
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Proposal of a symmetrical SOI MESFET with dual cavity regions.
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Successful redistribution of the potential lines.
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Considerable improvement on high-power and radio-frequency performances.
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Optimization and design consideration.