A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications

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• 作者：Hujun Jia ; ^{hjjia@mail.xidian.edu.cn} ; Yehui Luo ; Hang Zhang ; Ding Xing ; Peimiao Ma
• 关键词：4H-SiC MESFET ; Serpentine channel ; Drain saturation current ; Breakdown point shifting
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：315-322
• 全文大小：2295 K
• 卷排序：101

文摘

A novel 4H-SiC MESFET with serpentine channel for high power RF application is proposed. When the Hsd = 0.10 μm, the Id of the SC structure is about 21.5% larger than that of the DR structure. The SC-MESFET has the advantages of high breakdown voltage that is increased from 90 V to 132 V. The breakdown point has changed from the gate corner to the drain edge when the Hsd reaches to 0.10 μm or more. With the serpentine channel, the gate-source capacitance of SC structure is reduced by 15.7% compared with DR structure.