A theoretical study on the linearity of the I_d-T curve of a SiC MESFET for sensor application

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• 作者：Sutanu Dutta^a ; ^b ; ^{sutanu@mail.vidyasagar.ac.in}
• 关键词：SiC MESFET ; Two region model ; Temperature dependence ; Sensitivity
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：446-454
• 全文大小：1186 K
• 卷排序：101

文摘

The variation of drain current is studied with temperature. An analytical expression of temperature sensitivity of a MESFET is derived. The variation of temperature sensitivity is studied for various device parameters. Results shows that the linearity of Id-T curve improves for proper selection of gate length and biasing conditions.