Increase in the scattering of electric field lines in a new high voltage SOI MESFET
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- 作者：Mohammad K. Anvarifard m.anvarifard@guilan.ac.ir" class="auth_mail" title="E-mail the corresponding author
- 关键词：Breakdown voltage ; Driving current ; Electric field ; Metal-semiconductor field-effect transistor (MESFET) ; Silicon-on-insulator (SOI)
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：15-27
- 全文大小：1720 K
文摘
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Proposal of a novel SOI MESFET including two trenches by different materials.
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The considerable scattering of the electric field lines.
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Improvement on driving current, breakdown voltage, unilateral power gain, minimum noise figure.
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Optimization and design consideration.