A physical-based simulation for the dynamic behavior of photodoping mechanism in chalcogenide materials used in the lateral programmable metallization cells
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- 作者：Mehdi Saremi
- 刊名：Solid State Ionics
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：290
- 期：Complete
- 页码：1-5
- 全文大小：790 K
文摘
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Explain the photodoping process in chalcogenide glasses used in lateral programmable metallization cells (PMC) RRAM devices
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Propose physical-based simulation in order to investigate the dynamic behavior of the photodoping mechanism
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Demonstrate important concepts such as double-layer capacitance, Ag conductive filament near cathode contact, and pinning of the hole quasi fermi level (QFL).