Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe
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- 作者：Bing Wanga ; wangbing@smart.mit.edu" class="auth_mail" title="E-mail the corresponding author ; Cong Wanga ; b ; David A. Kohena ; Riko I. Madea ; Kenneth Eng Kian Leea ; Taewan Kimd ; Tim Milakovichc ; Eugene A. Fitzgeralda ; c ; Soon Fatt Yoona ; b ; Jurgen Michela ; d
- 关键词：A3. Metalorganic vapor phase epitaxy ; B2. Semiconducting III&ndash ; V materials ; B2. Semiconducting gallium compounds ; B2. Semiconducting silicon compounds ; B3. Light emitting diodes
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 May 2016
- 年：2016
- 卷：441
- 期：Complete
- 页码：78-83
- 全文大小：1872 K
文摘
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GaAsP is directly epitaxially grown on Lattice-matched SiGe virtual substrates.
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Growth pressure and AsH3 pre-exposure time are optimized for GaAsP.
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The GaAsP films have low defect density and good crystal quality.