An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN
详细信息 查看全文
- 作者：Daeyoung Moona ; Jeonghwan Janga ; Daehan Choia ; In-Su Shina ; Donghyun Leea ; Dukkyu Baeb ; c ; Yongjo Parka ; b ; yp0520@snu.ac.kr" class="auth_mail" title="E-mail the corresponding author ; Euijoon Yoona ; b ; eyoon@snu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：A1. Defects ; A1. Substrates ; A1. Single crystal growth ; A2. Metalorganic chemical vapor deposition ; A3. Solid phase epitaxy ; A3. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 May 2016
- 年：2016
- 卷：441
- 期：Complete
- 页码：52-57
- 全文大小：2462 K
文摘
- •
Ultra-thin sapphire membrane micro-stripes were used as a compliant substrate.
- •
High quality GaN layer was grown on the sapphire membrane.
- •
Misfit dislocation density at the interface was reduced by 28%.
- •
Threading dislocation density in GaN was measured to be 2.4×108/cm2.
- •
Stress in GaN was reduced due to stress absorption by compliant sapphire membrane.