Influence of trench period and depth on MOVPE grown GaN on patterned r-plane sapphire substrates.
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- 作者：Marian Caliebea ; marian.caliebe@uni-ulm.de" class="auth_mail" title="E-mail the corresponding author ; Sushil Tandukara ; Zongzhe Chenga ; Matthias Hockerd ; Yisong Hanc ; Tobias Meischa ; Dominik Heinza ; Florian Huberd ; Sebastian Bauerd ; Alfred Plettlb ; Colin Humphreysc ; Klaus Thonked ; Ferdinand Scholza
- 关键词：A1. Parasitic doping ; A3. Metalorganic vapor phase epitaxy ; A3. Pre-structured sapphire substrates ; B1. Gallium nitride ; B2. Piezoelectric materials ; B2. Semipolar
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 April 2016
- 年：2016
- 卷：440
- 期：Complete
- 页码：69-75
- 全文大小：3227 K
文摘
- •
Influence of sapphire trench period and depth on MOVPE grown
GaN.- •
Larger period beneficial for small defect density on the wafer surface.
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Area ratio of sapphire facets influences coalescence process and defect development.
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Parasitic donor concentration increases for samples with smoother wafer surface.