Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
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- 作者：Kaddour Lekhala ; Sakhawat Hussaina ; b ; Philippe De Mierrya ; Philippe Venné ; guè ; sa ; Maud Nemoza ; Jean-Michel Chauveaua ; b ; Benjamin Damilanoa ; bd@crhea.cnrs.fr" class="auth_mail" title="E-mail the corresponding author
- 关键词：A1. Stresses ; A3. Metalorganic vapor phase epitaxy ; A3. Quantum wells ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 January 2016
- 年：2016
- 卷：434
- 期：Complete
- 页码：25-29
- 全文大小：1561 K
文摘
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Series of yellow-emitting (Ga,In)N/GaN quantum wells.
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Competition between stress, material quality and quantum confined Stark effect.
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Optimized In composition and quantum well thickness.