Epitaxial a394836a51d03186ecebceb66fc0" title="Click to view the MathML source">(Bi₂Se₃)$({\mathrm{Bi}}_2{\mathrm{Se}}_3)$ films were grown on the sapphire substrate by MOVPE at 460 °C.

Rhombohedral and orthorhombic films of (Bi_1−xSb_x)₂Se₃${({\mathrm{Bi}}_{1-x}{\mathrm{Sb}}_x)}_2{\mathrm{Se}}_3$ were deposited at 480 °C.

Rhombohedral (Bi₄Se₃)$({\mathrm{Bi}}_4{\mathrm{Se}}_3)$ and Bi phases were obtained at lower temperatures.

Characterization of the films was carried out by Raman, XRD, AFM, SEM and EDS techniques.