Epitaxial a394836a51d03186ecebceb66fc0" title="Click to view the MathML source">(Bi2Se3) films were grown on the sapphire substrate by MOVPE at 460 °C.
Rhombohedral and orthorhombic films of (Bi1−xSbx)2Se3 were deposited at 480 °C.
Rhombohedral (Bi4Se3) and Bi phases were obtained at lower temperatures.
Characterization of the films was carried out by Raman, XRD, AFM, SEM and EDS techniques.