Multi-objective optimization of tungsten CMP slurry for advanced semiconductor manufacturing using a response surface methodology

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• 作者：Jihoon Seo^a ; Joo Hyun Kim^a ; Myoungjae Lee^b ; Keungtae You^b ; Jinok Moon^a ; ^c ; Dong-Hee Lee^d ; ^{dh@hanyang.ac.kr} ; Ungyu Paik^a ; ^b ; ^{upaik@hanyang.ac.kr}
• 关键词：Chemical mechanical planarization ; Optimization ; Response surface methodology ; Slurries ; Semiconductor manufacturing process
• 刊名：Materials & Design
• 出版年：2017
• 出版时间：5 March 2017
• 年：2017
• 卷：117
• 期：Complete
• 页码：131-138
• 全文大小：1393 K
• 卷排序：117

文摘

The three principal components (i.e., Fe(NO3)3, H2O2, and SiO2 abrasives) in polishing slurries for the W barrier CMP process were optimized using RSM. The optimal components were obtained as follows: 17.6 ppm of Fe(NO3)3, 0.3 wt% of H2O2, and 5.0 wt% of SiO2 abrasives. We have achieved ultra-smooth surfaces of W-patterned wafers using the optimal W CMP slurry.