Liquid gate dielectric field effect transistor for a radiation nose

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• 作者：Jin-Woo Han ; M. Meyyappan ; Jae-Hyuk Ahn ; Yang-Kyu Choi
• 关键词：Field effect transistor ; Liquid gate dielectric ; Radiation sensor ; Radiation nose
• 刊名：Sensors and Actuators A: Physical
• 出版年：2012
• 出版时间：August, 2012
• 年：2012
• 卷：182
• 期：Complete
• 页码：1-5
• 全文大小：912 K

文摘

Radiation sensors are essential to detect illicit radiological materials, nuclear waste management, radiochemistry, nuclear physics, and medical research. Detectors should be capable of uncovering various radiation sources with a good energy resolution and being adaptable to different platforms such as handheld, desktop, and benchtop, which can be easily implemented for security check in harbors and airports. Many of the devices and systems presently in use are bulky and expensive. Herein, we present a new detection method and architecture based on metal oxide semiconductor field effect transistor. Some liquids react to radiation, leading to a change in properties such as dielectric constant. Inspired by such radiation-responsivity, we have constructed a transistor with a radiation-responsive liquid as a gate dielectric. Current-voltage characteristics of the device change upon gamma-ray irradiation. Different types of liquids that specifically interact with target radiations can be used in an array of transistors serving as a radiation nose in the future. Such a radiation nose can be adaptable to different platforms and for implementation as a dosimeter for radiotherapy patients, nuclear plant health and safety inspection, space travel, environmental monitoring, and sensors for security.