Post-growth modification of electrical properties of ZnTe nanowires
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文摘
ZnTe nanowires, grown by a vapor-liquid-solid technique are p-type and show a very high intrinsic resistivity. Enhancement of the nanowire conductivity was investigated by vacuum annealing, doping and Joule heating. The current-voltage (I-V) characteristics were measured in all cases and electrical parameters such as resistivity, carrier concentration and mobility were computed from the I-V curves. An improvement of five orders of magnitude in the electrical conductivity was seen after thermal annealing and Joule heating, comparable to the enhancement in conductivity obtained by doping.

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