文摘
Non-doped Mg2SiO4 single crystal was grown by the Czochralski process. Non-doped Mg2SiO4 single crystal shows RL, TSL, and RPL. RPL emission is observed around 630 nm while exciting at 270 nm. Build-up effect of RPL is observed by annealing below 260 °C. RPL can be completely erased by annealing ∼600 °C.