Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers

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• 作者：Yamaguchi ; Tomuo ; Nasu ; Masahiro ; Jiang ; Zhong-Tao ; Tabe ; Michiharu ; Kanda ; Yozo
• 关键词：Spectroscopic ellipsometry ; SIMOX ; Dielectric constants ; Si ; Size dependence
• 刊名：Thin Solid Films
• 出版年：1998
• 出版时间：February, 1998
• 年：1998
• 卷：313-314
• 期：Complete
• 页码：264-269
• 全文大小：186 K

文摘

The size dependence in optical properties of the top Si layer of SIMOX (separation by implanted oxygen) structures has been studied by spectroscopic ellipsometry. The ellipsometric parameters Ψ and Δ were measured in the spectral range from 230–800 nm in air. The sample structure analyzed is [top SiO₂]/[top Si]/[buried SiO₂]/[Si substrate]. By using the bulk dielectric functions, the thickness of the top SiO₂, top Si, and buried SiO₂ layers have been determined by the SIMPLEX method. The best fit to the data was realized by applying a fluctuating thickness model for the buried SiO₂ layer. The fluctuating thickness model is found to yield a much better fit than a model including an EMA interface roughness layer. Furthermore the MDF (model dielectric function) developed by Adachi was applied for the nanometre (nm) thick top Si layers in order to improve the fitting. As a result, a size dependence in the dielectric functions of the nm thick top Si layers was observed.