Capacitance–voltage study of single-crystalline Si dots on ultrathin buried SiO₂ formed by nanometer-scale local oxidation

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• 作者：Ishikawa ; Yasuhiko ; Kosugi ; Masaaki ; Kumezawa ; Minoru ; Tsuchiya ; Toshiaki ; Tabe ; Michiharu
• 关键词：Single-crystalline Si dot ; Nanometer-scale local oxidation ; Silicon-on-insulator ; Ultrathin buried SiO₂ ; C&ndash ; V ; Interface states
• 刊名：Thin Solid Films
• 出版年：2000
• 出版时间：July 3, 2000
• 年：2000
• 卷：369
• 期：1-2
• 页码：69-72
• 全文大小：555 K

文摘

By applying nanometer-scale local oxidation process to a silicon-on-insulator (SOI) wafer with an ultrathin (2 nm) buried oxide, single-crystalline Si dots were fabricated on the tunnel SiO₂, and their electronic properties were studied by capacitance–voltage (C–V) measurements. The C–V curves were primarily interpreted by electron tunneling between the dots and the base substrate. More importantly, the gap states at the dot/SiO₂ interface were always observed as a shoulder in the C–V curve. Since such a shoulder was not observed for a simple layered SOI structure, it is strongly suggested that the dot structure inevitably accompanies a large number of the interface gap states, probably due to the undulation of the interface.