Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin silicon-on-insulator wafers

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• 作者：Tabe ; Michiharu ; Kumezawa ; Minoru ; Ishikawa ; Yasuhiko ; Mizuno ; Takeshi
• 关键词：68.35.Bs ; 71.55.Cn ; 73.20.Dx ; 85.40.Ux ; Silicon ; Quantum well ; Quantum dot ; Silicon-on-insulator ; Valence band maximum ; X-ray photoelectron spectroscopy
• 刊名：Applied Surface Science
• 出版年：2001
• 出版时间：May 15, 2001
• 年：2001
• 卷：175-176
• 期：Complete
• 页码：613-618
• 全文大小：281 K

文摘

Quantum confinement effects in two-dimensional (2D) Si and zero-dimensional (0D) Si structures, fabricated from silicon-on-insulator wafers, have been comparatively studied primarily by X-ray photoelectron spectroscopy (XPS), focusing on the energy shifts of the valence band maximum (VBM). As a result, it was found that the VBM obviously shifts toward higher binding energies during layer thinning of Si well and size reduction of Si dots, in accordance with quantum mechanical consideration.