Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer

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• 作者：Zainal A. Burhanudin ; Ratno Nuryadi ; Yasuhiko Ishikawa and Michiharu Tabe
• 关键词：SOI ; Agglomeration ; Si wire ; Si island
• 刊名：Thin Solid Films
• 出版年：2006
• 出版时间：5 June 2006
• 年：2006
• 卷：508
• 期：1-2
• 页码：235-238
• 全文大小：346 K

文摘

The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh vacuum. Atomic force microscopy revealed that, in the 4–9 nm thickness range, the top Si layer is deformed into wire arrays in the 112¯ directions. However, at thicknesses below 4 nm, randomly formed Si islands were observed. This structural transition from wires to islands is presumably due to the atomic-scale thickness fluctuation in the initial Si layer.