Application of high frequency scanning acoustic microscopy for the failure analysis and reliability assessment of MEMS sensors
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- 作者：S. Oberhoff ; Stefan.Oberhoff@de.bosch.com" class="auth_mail" title="E-mail the corresponding author ; K. Goetz ; K. Trojan ; M. Zoeller ; J. Glueck
- 关键词：Scanning acoustic microscopy ; High frequency SAM ; Infrared microscopy ; MEMS inertial sensors ; Wafer bonding
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：64
- 期：Complete
- 页码：656-659
- 全文大小：967 K
文摘
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High frequency SAM delivers a high confidence level of failure localization.
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A delamination on the ASIC surface was recognized with package SAM and HF SAM.
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A 40 nm wide crack could be resolved with a lateral resolution of 10 μm by HF SAM.
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SAM and IR microscopy can be combined to identify cracks in MEMS sensors.
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Thus, also the vertical crack position can be determined on a micrometer length scale.