SHI induced modification in structural, optical, dielectric and thermal properties of poly ethylene oxide films
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文摘
Poly ethylene oxide (PEO) films were synthesized by solution cast method. These self-standing films were exposed with 60 MeV C+5 ion and 100 MeV Ni+7 ion at different fluences. SHI induced effect was investigated by employing various techniques. The crystalline size decreased upon irradiation as observed from XRD analysis. FTIR analysis reveals the decrement in the peak intensity upon irradiation. Tauc’s method was used to determine the optical band gap (Eg), which shows decreasing trends with increase of fluence. The dielectric properties were investigated in the frequency range 10 Hz to 10 MHz for unirradiated and irradiated films. The dielectric constant remains same for the broad-spectrum of frequency and increases at lower frequency. The dielectric loss also moderately influence as a function of frequency due to irradiation. DSC analysis validated the results of XRD. Scanning electron microscopy (SEM) reveals that there is significant change in the surface morphology due to irradiation.

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