Atomic layer deposition of ZnO on graphene for thin film transistor

详细信息    查看全文

• 作者：Rongsheng Liu^a ; Minfang Peng^a ; ^{minfang_peng@163.com" class="auth_mail" title="E-mail the corresponding author} ; Haiyan Zhang^a ; Xun Wan^a ; ^b ; Meie Shen^c
• 关键词：Composite materials ; Carbon materials ; Electrical properties ; Thin films ; Electronic materials
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：56
• 期：Complete
• 页码：324-328
• 全文大小：795 K

文摘

A ZnO/graphene composite thin film was obtained by depositing ZnO on graphene through an Atomic Layer Deposition (ALD) process. The graphene layer was synthesized through a Chemical Vapor Deposition (CVD) process. The achievement of ZnO deposition on graphene was attributed to the Perylene Tetracarboxylic Acid (PTCA) treatment on graphene. Both ZnO Thin Film Transistor (TFT) and ZnO/graphene TFT were fabricated and tested. The results show that both of them displayed a high ON/OFF ratio, while ZnO/graphene TFT displayed an enhanced carrier mobility over ZnO TFT.