Structural and physical properties of Ni and Al co-doped ZnO films grown on glass by direct current magnetron co-sputtering

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• 作者：Mingpeng Yu ; Hong Qiu ; Xiaobai Chen ; Hongxi Liu ; Mingwen Wang
• 关键词：Ni and Al co-doped ZnO film ; Structure ; Transmittance ; Resistivity ; Magnetization
• 刊名：Physica B
• 出版年：2009
• 出版时间：1 June 2009
• 年：2009
• 卷：404
• 期：12-13
• 页码：1829-1834
• 全文大小：402 K

文摘

About 200 nm-thick Ni and Al co-doped ZnO films were deposited on glass substrates at 300 and 573 K by co-sputtering ZnO:Al and Ni targets. When the sputtering power applied to the Ni target was adjusted to 11 and 18 W, the Zn_0.87Al_0.04Ni_0.09O film and the Zn_0.85Al_0.04Ni_0.11O film were obtained. All the films have a wurtzite structure and grow mainly with [1 0 0] and [1 1 0] orientations in the growing direction. The films consist of thin columnar grains perpendicular to the substrate. However, the high deposition temperature promotes the grain growth. For the Zn_0.87Al_0.04Ni_0.09O films grown at 300 and 573 K as well as the Zn_0.85Al_0.04Ni_0.11O film grown at 300 K, an optical transmittance increases monotonously from 20 % to 60 % on increasing the wavelength from 390 to 760 nm. However, the Zn_0.85Al_0.04Ni_0.11O film deposited at 573 K exhibits a flat curve of the transmittance above 50 % in the wavelength range of 500–760 nm. The films have an n-type semiconducting behavior at room temperature. The Zn_0.85Al_0.04Ni_0.11O film grown at 573 K has the lowest resistivity (6.9×10⁻² Ω cm), the highest free electron concentration (1.0×10²⁰ cm⁻³) and the lowest Hall mobility (0.87 cm²/V s). The films, except for the Zn_0.87Al_0.04Ni_0.09O film grown at 300 K, have the room temperature ferromagnetism. The Zn_0.85Al_0.04Ni_0.11O film grown at 573 K has the highest saturation magnetization (5.6×10⁻⁴ T), a saturation field of 2.5×10⁵ A/m and a coercivity of 8.5×10³ A/m.