Composition dependence of the band gap energy for the dilute nitride and As-rich GaN_xSb_yAs_{1∿span style='font-style: italic'>x∿span style='font-style: italic'>y} (0≿span style='font-style: italic'>x≿.05, 0≿span sty

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• 作者：Chuan-Zhen Zhao^a ; ^{as3262001@aliyun.com" class="auth_mail" title="E-mail the corresponding author} ; Heng-Fei Guo^a ; Tong Wei^b ; Sha-Sha Wang^a ; Ke-Qing Lu^a
• 关键词：GaNAsSb ; N level ; Band gap energy ; Sb level ; Dilute nitride
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：15 March 2016
• 年：2016
• 卷：485
• 期：Complete
• 页码：35-38
• 全文大小：792 K

文摘

The double band anticrossing model is modified and the modified double band anticrossing model is used to describe the band gap energy of the dilute nitride GaN_xSb_yAs_1−x−y. It is found that the parameter C_MSb$C_{MSb}$ is independent on Sb content when the Sb content is not larger than 0.3. We also find that the main factor reducing the band gap energy is the coupling interaction between the N level and the CBM of GaAsSb. In addition, it is found that the impurity-host interaction is determined by the energy difference and the mismatches in size and electronegativity between the introduced atoms and the anions of the host material.