Quantitative analysis of O₂ gas sensing characteristics of picene thin film field-effect transistors

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• 作者：Xuesong Lee ; Yasuyuki Sugawara ; Akio Ito ; Shuhei Oikawa ; Naoko Kawasaki ; Yumiko Kaji ; Ryoji Mitsuhashi ; Hideki Okamoto ; Akihiko Fujiwara ; Kenji Omote ; Takashi Kambe ; Naoshi Ikeda ; Yoshihiro Kubozono
• 关键词：Organic thin film transistor ; Picene ; O₂ sensor ; Mobility reduction factor ; Hysteresis
• 刊名：Organic Electronics
• 出版年：2010
• 出版时间：August 2010
• 年：2010
• 卷：11
• 期：8
• 页码：1394-1398
• 全文大小：559 K

文摘

O₂ gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO₂ gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane-coated SiO₂. The picene FETs show very sensitive O₂ gas sensing effects down to 10 ppm. A quantitative analysis is presented of the gate voltage (V_G) dependent mobility induced by O₂ exposure, i.e., the suppression of drain current at high V_G.