Understanding the dependence of performance on the dielectric-semiconductor interface in pentacene-based organic field-effect transistors

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• 作者：Cheng-Fang Liu^a ; Yan Lin^a ; Wen-Yong Lai^a ; ^b ; ^{iamwylai@njupt.edu.cn} ; Wei Huang^a ; ^b
• 关键词：Organic field-effect transistors ; Surface modification ; Pentacene ; Mobility
• 刊名：Materials Letters
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：189
• 期：Complete
• 页码：286-289
• 全文大小：993 K
• 卷排序：189

文摘

The dependence of performance on the dielectric-semiconductor interface in pentacene-based OFETs was investigated. The hole mobility of OFETs was enhanced from 0.43 cm2/V s to 0.72 cm2/V s when treating the substrate with OTMS versus OTS. Flat pentacene domains with larger grain sizes and less crystal boundaries were observed for the OTS treated surface.